Thermal Investigations of Vacuum Evaporated Cd1-xZnxTe Heterojunction Thin Films*

Abstract

The Cd1-xZnxTe(x=0.02,0.04,0.06,0.08) binary compounds and their pseudo-binary solid solutions crystallize into homologous layered
structures parallel to the C-axis and are highly anisotropic. Among these Cd0.96Zn0.04Te crystal is a p-type narrow band gap semiconductor with the direct band gap of 0.16 eV. In order to tune the band gap, a third substitution element may be added. The present study aims at resistivity, charge carrier mobility and concentration measured on Cd0.96Zn0.04Te thin films. Digital meters were used for all electrical measurements. The ependence of resistivity of the film on thickness and substrate temperature has been measured. Effect of film thickness and substrate temperature on carrier concentration and mobility has also been studied.